transistor SMD 12W MOSFET datasheet, ... â Superior thermal stability The high power transistor part ... primary winding, mosfet transistor and current ... The major differences are Quasi saturation region & secondary breakdown region. The Quasi saturation region is available only in Power transistor characteristic not in signal transistors. It is because of the lightly doped collector drift region present in Power BJT. The primary breakdown is similar to the signal transistor’s avalanche breakdown.
POWER TRANSISTOR E13002ELECTRICAL CHARACTERISTICS Tc=25oC unless otherwise specifiedFEATURESNPN SILICON TRANSISTORTc=25oC unless otherwise specifiedParameterSymbolTest conditionsMIN datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.