Gaas mesfet spdt switch datasheet

The HMC232ALP4E is a broadband high isolation non-reflective GaAs MESFET SPDT switch in a low cost leadless QFN surface mount plastic package. Covering DC to 12 GHz, the switch features >57dB isolation up to 3 GHz and >45 dB isolation up to 12 GHz.
HWS408 datasheet, HWS408 datasheets, HWS408 pdf, HWS408 circuit : HW - GaAs DC-3 GHz SPDT Switch ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. DATA SHEET AS186-302LF: GaAs IC High-Isolation Positive Control SPDT Nonreflective Switch LF to 4 GHz Applications GSM, PCS, WCDMA, 2.4 GHz ISM and 3.5 GHz wireless local loop Features Positive voltage control (0/3 to 0/5 V) High isolation (55 dB @ 0.9 GHz and 1.9 GHz) Three-switch solution for base station synthesizer switch

En25f16 datasheets

The HMC322ALP4E is a broadband non-reflective GaAs MESFET SP8T switch in a low cost leadless surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three.
KCB Solutions specializes in design, manufacturing and testing of high reliability RF semiconductor products for defense and space industries. Description The HWS429 is a GaAs SPDT Terminated (non-reflective) Switch operating at DC-3 GHz in a low cost QFN12L (3x3 mm) plastic lead (Pb) free package. The HWS429 features low insertion loss and high isolation with very low DC power consumption and can be used in both 50 ohm and 75 ohm systems. upg152ta-e3 l, s band spdt gaas mmic switch(409) features. wide frequency range: 100 mhz to 2.5 ghz low insertion loss: 0.5 db typical at 2.0 ghz high p1db: +30 dbm typ. @ 2 ghz low control voltage: or 0v super small surface mount package: sot-26 available on tape and reel.

Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications. The HMC322ALP4E is a broadband non-reflective GaAs MESFET SP8T switch in a low cost leadless surface mount package. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to three.
DC to 4 GHz GaAs MESFET SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB isolation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm.

Mike sheets attorney dayton ohio

GaAs MESFET. Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. GaAs , . GaAs FET MMIC SPDT Switch Reflective DC-18 G H z . GaAs FET MMIC SPDT Switch Non-Reflective DC-18 G H z . GaAs MESFET. Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. GaAs , . GaAs FET MMIC SPDT Switch Reflective DC-18 G H z . GaAs FET MMIC SPDT Switch Non-Reflective DC-18 G H z .
3W, L/S-BAND MEDIUM POWER GaAs MESFET, NE6500379A datasheet, NE6500379A circuit, NE6500379A data sheet : CEL, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors.